International Workshop on Wide-Band-Gap Power Electronics 2014

Introduction：

In the last decade the technology fast moved to a critical point of soliciting better physical and electrical properties of wide band gap semiconductors. With SiC and GaN diodes on the market and more active devices at the corner, we are called for intense communication among industry, academia, research institutes and policy makers to facilitate the development and deploy of this technology.

As a consequence, the forth “International Workshop on WBG Power Electronics” (IWWPE) is planned to be held in Hsinchu, Taiwan on April 10 and 11, 2014, aimed to build a platform for sharing experiences, opinions and expectations in this field. In this workshop a dozen of experts on power electronics Technology Trend/Application, Device/Fabrication, Package/Reliability, Materials/Equipment, and vendors for the WBG power electronics will be invited to give lectures. She/He interested in this technology is cordially welcome to participate in this workshop.

Date：April 10 ~ 11, 2014

Venue：International Conference Hall, Rm. 422, 4^th floor, Bldg. 51, No.195, Sec. 4, Chung Hsing Road., Chutung, Hsinchu, Taiwan

Organizer：WBG Power Electronics Consortium (WPEC)

Who should attend：Semiconductor fabrication foundries, module system manufacturers, materials, and individuals interested in power device design technology.

device design technology.

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