Introduction:
Power electronics have comprised an important segment of semiconductor market since the early days of semiconductor industry. In the last decade the technology fast moved to a critical point of soliciting better physical and electrical properties of wide band gap semiconductors. With SiC and GaN diodes on the market and more active devices at the corner, we are called for intense communication among industry, academia, research institutes and policy makers to facilitate the development and deploy of this technology.
As a consequence, the first “International Workshop on WBG Power Electronics” (IWWPE) is planned to be held in Hsinchu, Taiwan on April 9 and 10, 2015, aimed to build a platform for sharing experiences, opinions and expectations in this field. In this workshop a dozen of experts on Technology Trend/Application, Module/Package, Device/Fabrication, EPI/Substrate, as well as vendors for the WBG power electronics will be invited to give lectures. She/He interested in this technology is cordially welcome to participate in this activity.
Date:April 9th (All day) ~ 10th (Half day), 2015
Venue:422 International Conference Room, Bldg. 51, Industrial Technology Research Institute, Hsinchu, Taiwan
Organizer:WBG Power Electronics Consortium (WPEC), ITRI
Who should attend:Semiconductor fabrication foundries, module system manufacturers and individuals interested in power device design technology
【議 程】
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9:00~9:30
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Registration
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9:30~9:40
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Opening -- Dr. C. T. Liu / Vice President & EOL General Director, ITRI
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Time
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No.
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Title of talk
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Speaker
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Affiliation
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Session A: GaN Device/Fabrication
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09:40~10:20
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A1
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Development of Si CMOS compatible GaN power devices
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Mr. Shiao-chin Tuan
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TSMC, Taiwan
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10:20~10:40
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Coffee Break
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10:40~11:20
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A2
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GaN-trends and application
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Dr. Alex Lidow
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Efficient Power Conversion, USA USA
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11:20~12:00
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A3
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Commercialization of 600 V highly reliable GaN HEMT for power saving society
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Dr. Kikkawa Toshihide
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Transphorm
Japan
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12:00~13:30
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Lunch
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Session B: SiC Device/Fabrication
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13:30~14:10
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B1
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Advanced SiC Devices and their application for a HV field
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Dr. Takashi Nakamura
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ROHM, Japan
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14:10~14:50
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B2
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Mid voltage SiC MOSFETS enable new higher power applications
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Dr. Guy Moxey
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CREE, USA
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14:50~15:10
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Coffee Break
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15:10~15:50
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B3
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Performance & reliability of GE's SiC MOSFETs
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Dr. Peter Losee
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GE Global Research, USA
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15:50~16:30
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B4
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High efficiency, high temperature approaches for SiC power switches
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Dr. Ranbir Singh
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GeneSiC, USA
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18:00~20:00
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Banquet
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Session C: Production/ Reliability
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Time
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Title of talk
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Speaker
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Affiliation
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9:00~9:40
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C1
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Latest SiC product with short circuit protection function
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Mr. Junji Yamada
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Mitsubishi Electric, Japan
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9:40~10:20
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C2
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The reliability of silicon carbide integrated circuits for power electronics applications
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Dr. Alan Mantooth
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GRAPES /Arkansas, USA
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10:20~10:40
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Coffee Break
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10:40~11:20
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C3
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Characteristic evaluation method of wide-band-gap semiconductors
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Mr. Narita
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IWATSU, Japan
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Session D: Material/Equipment
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11:20~12:00
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D1
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Hetero epitaxial growth of GaN-based HEMT on Si
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Dr. Takashi Egawa
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Nagoya Institute of Technology Japan
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12:00~12:40
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D2
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Challenge and opportunity of MOCVD tool for electronic devices on Si and bulk GaN
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Dr. Akinori Ubukata
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TNSC, Japan
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12:40~14:00
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Lunch
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地址：新竹縣竹東鎮中興路四段195號17館203室 
電話： 03-5917408 
傳真： 03-5917193